Method for fabricating electrode patterns

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430 20, 430313, 430324, 430328, 430329, 430394, 427259, G03F 726

Patent

active

054609224

ABSTRACT:
A method of forming electrode patterns on a substrate. A substrate (30) is patterned with a photoresist layer (14) on the front side so that portions (18) of the substrate are revealed. A metal oxide layer (32) is deposited on the patterned photoresist layer and the revealed portions of the substrate. The patterned photoresist layer is then flood exposed to actinic radiation (19). The photoresist pattern (20) is removed, carrying with it those portions of the metal oxide layer deposited on the photoresist layer, forming an electrode pattern (22) by a lift-off technique.

REFERENCES:
patent: 3982943 (1976-09-01), Feng et al.
patent: 4004044 (1977-01-01), Franco et al.
patent: 4174219 (1979-11-01), Andres et al.
patent: 4670097 (1987-06-01), Abdalla et al.
patent: 4827326 (1989-05-01), Altman et al.
patent: 5121237 (1992-06-01), Ikeda
IBM Technical Disclosure Bulletin, Fredericks, et al., titled "Polysulfone Lift-Off Masking Technique," IBM Corp., vol. 20, No. 3, Aug., 1977.
IBM Technical Disclosure Bulletin, Dalal, et al., titled "Chrome-Copper-Chrome Lift-Off Process," IBM Corp., vol. 20, No. 38 Jan., 1978.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating electrode patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating electrode patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating electrode patterns will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1885788

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.