Conductivity modulated MOSFET

Details Conductivity modulated MOSFET Conductivity modulated MOSFET

1994-06-14

1998-07-14

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

057808872

ABSTRACT:
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.

REFERENCES:
patent: 3921283 (1975-11-01), Shappir
patent: 4072975 (1978-02-01), Ishitani
patent: 4364073 (1982-12-01), Becke et al.
patent: 4441247 (1984-04-01), Gargini et al.

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