Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-13
1998-07-14
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438648, 438656, 438681, H01L 21283
Patent
active
057803560
ABSTRACT:
Operation of semiconductor devices suitable for high integration is achieved in a method for forming a metal wire, in which a plasma treating process is carried out to recruit a dense high-melting-point nitride film as a barrier layer. The method includes steps of providing a semiconductor substrate, forming an insulating layer having a contact hole over the semiconductor substrate, forming a high melting point metal film over exposed surfaces of the contact hole and the insulating layer, plasma treating the high melting point metal film to form a dense lower high melting point metal nitride film over the high melting point metal film, forming an upper high melting point metal nitride film over the dense lower high melting point metal nitride film in a chemical vapor deposition process, forming a tungsten layer on the upper high melting point metal nitride film within the contact hole so as to fill the contact hole, and forming a conductive metal film over the tungsten layer and the upper high melting point metal nitride film.
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Raaijmakers, I., et al., "Contact Hole Fill with Low Temperature . . . ," Jun. 12-13, 1990, VMIC Conf., pp. 219-225, Jun. 1990.
Hyundai Electronics Industires Co., Ltd.
Quach T. N.
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