Corrosion-resistant aluminum nitride coating for a semiconductor

Details Corrosion-resistant aluminum nitride coating for a semiconductor Corrosion-resistant aluminum nitride coating for a semiconductor

1997-01-10

1998-07-14

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723R, 216 67, H01L 2100

Patent

active

057798486

ABSTRACT:
An improved integrated circuit processing apparatus is disclosed wherein a protective coating of aluminum nitride (AlN), on the inner surface of a quartz (SiO.sub.2) window in the wall of the integrated circuit processing apparatus provides an enhanced resistance to the corrosive effects of halogen-containing reagents, particularly fluorine-containing gases, on the protected inner surface of the quartz window. Formation of an AlN coating having a minimum thickness of about 1 micron up to a maximum thickness of about 15 microns with a coating uniformity of .+-.15% of the average coating thickness, provides the desired protection of the inner surface of the quartz window from corrosive attack by fluorine-containing gases, such as NF.sub.3, SF.sub.6, and fluorine-containing hydrocarbons, e.g., C.sub.2 F.sub.6.

REFERENCES:
patent: 5443686 (1995-08-01), Jones et al.
patent: 5650013 (1997-07-01), Yamazaki
patent: 5680013 (1997-10-01), Dornfest et al.

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