Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-11-12
1998-02-24
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438158, H01L 2174
Patent
active
057211647
ABSTRACT:
An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating layer is more free of pin-holes. After the insulating layer in the thin oxide region of the TFT is etched away, conventional fabrication processes are followed. The dielectric of the thin film oxide region is the same as that of the conventional TFT; but the dielectric in the vincinity of the thin oxide region, the crossovers of the data lines and the scan lines, and the gate dielectric layer of the TFT are now composed of the high quality insulating layer. The TFT structure can improve the yield of fabrication by confining the channel region in the shadow of the gate electrode to reduce the leakage photo-current, and by reducing the steps at cross-overs steps and interconnections to avoid open-circuit.
REFERENCES:
patent: 5034339 (1991-07-01), Tanaka et al.
patent: 5045485 (1991-09-01), Tanaka et al.
M. Akiyama et al. "An a-Si TFT with a New Light-Shield Structure and Its Application to Active Matrix Liquid Crystal Displays" IEEE International Electron Device Meeting Proceedings Dec. 1988 pp. 268-271.
Sakamoto et al. "A 10 In-Diagonal Active-Matrix LCD Addressed By a-Si TFT's ", Proceedings of the SID vol. 28/2, 1987, pp. 145-148.
H. Katoh, "TFT-LCD Technology Achieves Color-Notebook PC", Nikkei Electronics ASIA, pp. 68-71, 1992.
Ackerman Stephen B.
Booth Richard A.
Industrial Technology Research Institute
Jones II Graham S.
Niebling John
LandOfFree
Method of manufacturing thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film transistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1874924