Semiconductor memory device comprising ferroelectric capacitors

Details Semiconductor memory device comprising ferroelectric capacitors Semiconductor memory device comprising ferroelectric capacitors

1997-08-22

1999-05-04

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

059010770

ABSTRACT:
A semiconductor memory device has a plurality of memory cells, each having a ferroelectric memory capacitor, arranged in a matrix formation in rows and columns. A read-out device is associated with each row for reading out data stored in a selected one of the memory cells in the row based on voltages generated by the ferroelectric capacitor belonging to that selected memory cell and a plurality of divided ferroelectric capacitors which are distributed in the direction of the rows such that piezoelectric effects on the ferroelectric capacitors will be diminished.

REFERENCES:
patent: 5341325 (1994-08-01), Nakano et al.
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5640030 (1997-06-01), Kenney
patent: 5668753 (1997-09-01), Koike

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