Plasma-assisted etch process with endpoint detection

Details Plasma-assisted etch process with endpoint detection Plasma-assisted etch process with endpoint detection

1981-11-05

1983-03-22

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 204192E, H01L 21306, C23C 1500

Patent

active

043774369

ABSTRACT:
Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.

REFERENCES:
patent: 4246060 (1981-01-01), Keller
patent: 4312732 (1982-01-01), Degenkolb et al.
patent: 4328068 (1982-05-01), Curtis
Curtis et al., "End Point . . . Spectroscopy", J. of Electrochemical Society, vol. 125, (5/78), pp. 829-830.
Alcorn, "Determining . . . Holes", IBM Technical Disclosure Bulletin, vol. 19, No. 3, (8/76), pp. 982-983.
Harshbarger et al., "A Study . . . Etching", Applied Spectroscopy, vol. 31, No. 3, (1977), pp. 201-207.
Stafford et al., "Optical . . . Stripping", Solid State Technology, (9/77), pp. 51-55.
Desilets, "Multiple . . . Detector", IBM Technical Disclosure Bulletin, vol. 21, No. 3, (8/78), pp. 1035-1037.
Hoekstra, "Metal Etch Monitor", IBM Technical Disclosure Bulletin, vol. 14, No. 9, (2/72), pp. 2680-2682.
Khorury et al., "Front . . . System", IBM Technical Disclosure Bulletin, vol. 20, No. 5, (10/77), pp. 1756-1759.
Horiike et al., "A Dry . . . Microwave", Electrochemical Society-Semiconductor Silicon, (5/77), p. 1071ff.

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