Single polysilicon cross-coupled resistor, six-transistor SRAM c

Details Single polysilicon cross-coupled resistor, six-transistor SRAM c Single polysilicon cross-coupled resistor, six-transistor SRAM c

1990-07-23

1992-06-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437200, 437233, 437918, 357 51, H01L 2170

Patent

active

051262797

ABSTRACT:
A six-transistor latch cell is formed with resistors connecting opposite nodes of the latch. A Salicide (self-aligned silicide) isolation mask layer (25) is used to permit the use of a single layer of polysilicon (23) to implant both the two resistors and the six transistors. The Salicide isolation mask (25) is provided to mask all high energy dopant implants in the poly resistor region and to function as a dielectric between the poly resistor and the local interconnect (27) passing above it. This Salicide isolation layer (25) is easy to manufacture, and adds very little to the vertical topology.

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