Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-03-26

1998-06-30

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257590, 257347, 257130, 257155, H01L 29861, H01L 2906

Patent

active

057738688

ABSTRACT:
A semiconductor device having a dielectric isolation (DI) structure using an SOI substrate or the like. An active region as a main current path of the semiconductor device is sandwiched between DI grooves having a side wall substantially vertical to the main surface of the substrate, and the width W of the main current path between the DI grooves is set to 5 .mu.m or narrower to reduce excessive carriers. The reverse recovery charge Q.sub.rr prolonging the turn-off time can be shortened, which enables high speed switching.

REFERENCES:
patent: 3411051 (1968-11-01), Kilby
patent: 4550332 (1985-10-01), Wagner
patent: 5043787 (1991-08-01), Soclof
patent: 5241210 (1993-08-01), Nakagawa et al.
patent: 5587595 (1996-12-01), Neubrand
IEEE Transactions on Electron Devices, vol. 38, No. 7, pp. 1650-1654, Jul. 1991, A. Nakagawa et al., "Breakdown Voltage Enhancement For Devices On Thin Silicon Layer/Silicon Dioxide Film".

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