Method for the growth of a compound semiconductor crystal

Details Method for the growth of a compound semiconductor crystal Method for the growth of a compound semiconductor crystal

Filed on

1987-07-28

Date issued

1989-09-26

Examiner

Dixon, Jr., William R.

Patent Class

Adhesive bonding and miscellaneous chemical manufacture

SubClass

Delaminating processes adapted for specified product

SubSubClass

Delaminating in preparation for post processing recycling step

Other Related Categories

156609, 156612, 437 81, 437104, C30B 2306, H01L 2120

Type

Patent

Status

active

Patent number

048697761

Description

ABSTRACT:
A method for the growth of a compound semiconductor crystal using the sublimation method or the halogen transportation method, comprising maintaining the temperature of a limited portion of the crystal, which has just begun to grow, at a higher level than that of the crystal growth temperature, thereby attaining control of the crystallinity of the crystal at the initial growth stage, and an apparatus for the said method.

REFERENCES:
patent: 3200018 (1965-08-01), Grossman
patent: 4439266 (1984-03-01), Gentile et al.
patent: 4695347 (1987-09-01), Fischer
patent: 4699688 (1987-10-01), Shastry
Tairov et al.; "Progress in Controlling the Growth of Polytypic Crystals"; V. I. Ulyanov (Lenin) Electrical Engineering Institute, Leningrad, P-22, 197022 USSR; Aug. 24, 1982; pp. 111-161.

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