Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-02-20

1998-05-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257380, 257900, H01L 2976

Patent

active

057539570

ABSTRACT:
The present invention is mainly characterized in that a Bi-CMOS is obtained in which characteristics of a bipolar transistor are not deteriorated. The device includes a bipolar transistor and a CMOSFET formed on a semiconductor substrate separately from each other by a field oxide film. The thickness of a gate electrode of an NMOSFET and a gate electrode of a PMOSFET is made larger than the thickness of an emitter electrode of the bipolar transistor.

REFERENCES:
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4735916 (1988-04-01), Homma et al.
patent: 4752589 (1988-06-01), Schaber
patent: 4812417 (1989-03-01), Hirao
patent: 5124817 (1992-06-01), Brassington et al.
patent: 5192992 (1993-03-01), Kim et al.
patent: 5208472 (1993-05-01), Su et al.
IEEE Electron Device Letters, vol. 13, No. 8, pp. 392-395 by Bashir et al., Aug. 1992.
HSST/BiCMOS Technology with 26ps ECL and 45ps 2V CMOS Inverter, Konaka et al., 1990 IEEE pp. 493-496, Dec. 1990.
2 Micron Merged Bipolar-CMOS Technology, Alvarez et al., 1984 IEDM pp. 761-764, Dec. 1984.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855529