MOS device having a gate to body connection with a body injectio

Details MOS device having a gate to body connection with a body injectio MOS device having a gate to body connection with a body injectio

1996-12-19

1998-05-19

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257471, 257481, H01L 2701, H01L 2712, H01L 27095, H01L 29861

Patent

active

057539553

ABSTRACT:
A MOS transistor formed in a silicon on insulator structure includes a rectifying connection between a body portion and the gate. The connection decreases the threshold voltage of the transistor in the reverse bias state and limits a difference in voltage between the body and gate in the forward bias state of the rectifying contact.

REFERENCES:
IEEE Transactons on Electron Devices, vol. ED-34, No. 4, April, 1987, "An SOI Voltage-Controlled Bipolar-Mos Device", by Jean-Pierre Colinge, pp. 845-849, Apr., 1987.

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