Semiconductor device having a capacitor

Details Semiconductor device having a capacitor Semiconductor device having a capacitor

1998-05-06

2000-06-20

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, H01L 2976, H01L 2994, H01L 27108, H01L 31113

Patent

active

06078072&

ABSTRACT:
A lower electrode layer 1 of a capacitor 10 is formed by sputtering performed at a temperature lower than 450.degree. C. in an atmosphere containing oxygen, and thereby the lower electrode layer 1 thus formed contains oxygen. Thereby, a method of manufacturing a semiconductor device having the capacitor can suppress current leak, and can prevent peeling of an electrode.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5744832 (1998-04-01), Wolters et al.
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5853451 (1998-12-01), Ishikawa

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