Method to improve the texture of aluminum metallization

Details Method to improve the texture of aluminum metallization Method to improve the texture of aluminum metallization

1998-02-13

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438687, 438637, 438624, H01L 2144

Patent

active

060777826

ABSTRACT:
A method to improve the texture of titanium and aluminum to reduce electromigration by controlling the deposition conditions and the texture of the substrates. Aluminum films can develop strong <111> texture, when titanium is used underneath aluminum. However, to prevent the interaction between aluminum and titanium, a layer of TiN or other barrier is necessary. Fortunately, TiN has a similar atom arrangement on the <111> plane as that of aluminum <111> and titanium <002>. Therefore, by controlling the orientation of titanium using a pre-sputter argon etch and low titanium deposition temperature, the texture of titanium can be transferred to TiN, and subsequently to aluminum.

REFERENCES:
patent: 5580823 (1996-12-01), Hegde et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5652464 (1997-07-01), Liao et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.

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