High voltage lateral semiconductor device

Details High voltage lateral semiconductor device High voltage lateral semiconductor device

1991-05-24

1993-11-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257339, H01L 2980

Patent

active

052647196

ABSTRACT:
The present invention provides an improved lateral drift region for both bipolar and MOS devices where improved breakdown voltage and low ON resistance are desired. A top gate of the same conductivity type as the device region with which it is associated is provided along the surface of the substrate and overlying the lateral drift region. In an MOS device, the extremity of the lateral drift region curves up to the substrate surface beyond the extremity of the top gate to thereby provide contact between the JFET channel and the MOS channel.

REFERENCES:
patent: 4626879 (1986-12-01), Colak
patent: 4628341 (1986-12-01), Thomas
patent: 4811075 (1989-03-01), Eklund et al.
patent: 4994889 (1991-02-01), Takeuchi et al.
patent: 4994904 (1991-02-01), Nakagawa et al.

Affiliated with

Also associated with

Rating

High voltage lateral semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage lateral semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage lateral semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851555