Flattening method for interlayer insulating film

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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437228, B44C 122, H01L 21467

Patent

active

052640744

ABSTRACT:
Disclosed herein is a flattening method for an interlayer insulating film in a semiconductor device. A substance for forming a solid flattening film is prepared in a liquid-phase state, and a film (e.g., water film) of the substance in the liquid-phase state having a substantially flat upper surface is formed on an uneven upper surface of the interlayer insulating film. Subsequently, the liquid film thus formed is solidified to be formed into the solid flattening film. Then, the solid flattening film and a part of the interlayer insulating film are etched back to obtain a flat upper surface of the interlayer insulating film. Accordingly, the upper surface of the interlayer insulating film can be flattened at low temperatures.

REFERENCES:
patent: 4971948 (1990-11-01), Dam et al.
patent: 5077238 (1991-12-01), Fujii et al.

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