Hydrogen heat treatment method of silicon wafers using a high-pu

Details Hydrogen heat treatment method of silicon wafers using a high-pu Hydrogen heat treatment method of silicon wafers using a high-pu

1997-01-09

2000-05-23

Chaudhari, Chandra

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

438799, 438715, 438660, 438913, H01L 21324

Patent

active

060665793

ABSTRACT:
A heat treatment is performed in a hydrogen-gas containing atmosphere. A high-purity inert gas having a water content of not more than 2.57 ppm is used as a substitution gas for replacing a wafer-input air atmosphere and for replacing the hydrogen-gas containing atmosphere after the heat treatment.

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patent: 4042426 (1977-08-01), Beiser
patent: 5003375 (1991-03-01), Ichikawa
patent: 5508207 (1996-04-01), Horai et al.
patent: 5534294 (1996-07-01), Kubota et al.
patent: 5829139 (1995-05-01), Murphy et al.

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