Electronic devices with thin-film circuit elements forming a sam

Details Electronic devices with thin-film circuit elements forming a sam Electronic devices with thin-film circuit elements forming a sam

1996-04-25

1997-11-04

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056843186

ABSTRACT:
In an LCD or other electronic device, thin-film circuit elements on a substrate (100) form a sample-and-hold or other sampling circuit (10). The circuit (10) comprises a TFT (Ts) as a sampling transistor and preferably another TFT (T2) to compensate for displacement currents in charging and discharging the insulated gate (12) of the sampling TFT. Even when T2 is included, a slow drift in output voltage (Vo) is observed when Ts switches off, and this limits use of the circuit, especially in large area active-matrix devices. In accordance with the invention this slow drift is removed or significantly reduced by injecting minority carriers into the channel region of Ts (and T2) from a doped opposite-type region (119) or Schottky contact region (119) which is forward biased via a thin-film supply line (129). The minority carriers neutralise majority carriers which are being slowly released by thermal emission from trapping states in the TFT body.

REFERENCES:
patent: 3660732 (1972-05-01), Allison
patent: 4425631 (1984-01-01), Adam
patent: 4870399 (1989-09-01), Carlson
patent: 5300448 (1994-04-01), Merchant et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5378911 (1995-01-01), Murakami

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