Static semiconductor memory device adapted for stabilization of

Static information storage and retrieval – Systems using particular element – Flip-flop

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Details

365149, 365185, 365208, G11C 11412, G11C 11418

Patent

active

054522463

ABSTRACT:
In a static type semiconductor memory device having a memory cell, the memory cell includes a flip-flop which has first and second nodes, a first transfer gate transistor which is connected between a first bit line of a pair of complementary bit lines and the first node, a second transfer gate transistor which is connected between a second bit line of the pair of complementary bit lines and the second node, a first capacitor which is connected between a word line and the gate of the first transfer gate, and a second capacitor which is connected between the word line and the gate of the second transfer gate. By the structure, even if the cell ratio is made small, it is possible to achieve stable operation at a low operating voltage and possible, thereby, to achieve both low power consumption and a high degree of integration.

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