Semiconductor member and semiconductor device employing the same

Details Semiconductor member and semiconductor device employing the same Semiconductor member and semiconductor device employing the same

1984-12-21

1987-06-09

Edlow, Martin H.

357 16, H01L 2980

Patent

active

046724060

ABSTRACT:
A semiconductor member has a structure wherein a first semiconductor layer is held between second and third semiconductor layers which have forbidden band widths greater than a forbidden band width of the first semiconductor layer, and wherein only the second semiconductor layer which is formed on a side of the first semiconductor layer close to a substrate is doped with impurities. The semiconductor member constructs the depletion type with the first and second semiconductor layers, and the enhancement type with the first and third semiconductor layers. A semiconductor device can be properly formed in the enhancement or depletion type by selectively connecting the semiconductor layers.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4439782 (1984-03-01), Holonyak, Jr.
patent: 4550331 (1985-10-01), Milano
Mimura, T., "Why HEMT are Necessary and How They are Made", J.E.E., vol. 20, No. 200, Aug. 1983, pp. 60-62.
Pearsall, T. P., Hendel, R., O'Connor, P., Alavi, K., and Cho, A., "Selectively-Doped AlInAs/GaInAs Hetero-Structure Transistors", IEDM, 1982, pp. 801-802.
Kastalsky, A., and Luryi, S., "Novel Real-Space Hot-Electron Transfer Devices", IEEE Electron Devices Letters, vol. EDL-4, No. 9, Sep. 1983, pp. 334-336.
Thorne, R. E., Fischer, R., Su, S. L., Kopp, W., Drummond, T. J., Morkoc, H., "Performance of Inverted Structure Modulated Doped Schottky Barrier Field Effect Transistors", Japanese Journal of Applied Physics, vol. 21, No. 4, (Apr. 1982) pp. 1223-1224.

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