Patent
1984-12-21
1987-06-09
Edlow, Martin H.
357 16, H01L 2980
Patent
active
046724060
ABSTRACT:
A semiconductor member has a structure wherein a first semiconductor layer is held between second and third semiconductor layers which have forbidden band widths greater than a forbidden band width of the first semiconductor layer, and wherein only the second semiconductor layer which is formed on a side of the first semiconductor layer close to a substrate is doped with impurities. The semiconductor member constructs the depletion type with the first and second semiconductor layers, and the enhancement type with the first and third semiconductor layers. A semiconductor device can be properly formed in the enhancement or depletion type by selectively connecting the semiconductor layers.
REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4439782 (1984-03-01), Holonyak, Jr.
patent: 4550331 (1985-10-01), Milano
Mimura, T., "Why HEMT are Necessary and How They are Made", J.E.E., vol. 20, No. 200, Aug. 1983, pp. 60-62.
Pearsall, T. P., Hendel, R., O'Connor, P., Alavi, K., and Cho, A., "Selectively-Doped AlInAs/GaInAs Hetero-Structure Transistors", IEDM, 1982, pp. 801-802.
Kastalsky, A., and Luryi, S., "Novel Real-Space Hot-Electron Transfer Devices", IEEE Electron Devices Letters, vol. EDL-4, No. 9, Sep. 1983, pp. 334-336.
Thorne, R. E., Fischer, R., Su, S. L., Kopp, W., Drummond, T. J., Morkoc, H., "Performance of Inverted Structure Modulated Doped Schottky Barrier Field Effect Transistors", Japanese Journal of Applied Physics, vol. 21, No. 4, (Apr. 1982) pp. 1223-1224.
Katayama Yoshifumi
Kuroda Takao
Mishima Tomoyoshi
Morioka Makoto
Sawada Yasushi
Crane Sara W.
Edlow Martin H.
Hitachi , Ltd.
LandOfFree
Semiconductor member and semiconductor device employing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor member and semiconductor device employing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor member and semiconductor device employing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1832228