Rapid thermal processing apparatus for processing semiconductor

Details Rapid thermal processing apparatus for processing semiconductor Rapid thermal processing apparatus for processing semiconductor

1994-01-21

1997-11-04

Kunemund, Robert

Coating apparatus

Gas or vapor deposition

Work support

118729, 118725, 118724, 118 501, 219405, 219411, 392416, 392418, 392390, C23C 1600, F27D 1102

Patent

active

056835183

ABSTRACT:
A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution element is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a wafer surround ring around the wafer and, in some embodiments, a spindle and/or a susceptor insert underneath the wafer.

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