Method for forming a via contact hole of a semiconductor device

Details Method for forming a via contact hole of a semiconductor device Method for forming a via contact hole of a semiconductor device

1993-03-26

1995-09-19

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 2, 134 26, 437194, 437225, 437228, B44C 122, C03C 1500, C23F 102

Patent

active

054512913

ABSTRACT:
In the formation of a via contact hole of a semiconductor device, a polymer layer on the sidewall of a photoresist layer and via contact hole is effectively removed and the short of the via contact hole does not occur. For achieving such purpose, a wafer is cleaned in deionized water being added with CO.sub.2 gas during the process used for forming the via contact hole, and a protecting film (Al.sub.2 O.sub.3) is formed on a metal layer. Thereafter, since the polymer layer and a part of the photoresist layer is removed, the metal layer is not eroded and the polymer layer is completely removed.

REFERENCES:
patent: 5175124 (1992-12-01), Winebarger

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