Power semiconductor device suitable for automation of production

Details Power semiconductor device suitable for automation of production Power semiconductor device suitable for automation of production

Filed on

1991-07-26

Date issued

1993-06-01

Examiner

Hille, Rolf

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Housing or package

SubSubClass

With provision for cooling the housing or its contents

Other Related Categories

257690, 257703, 361388, H01L 3902, H01L 2302

Type

Patent

Status

active

Patent number

052162796

Description

ABSTRACT:
The feature of the construction of this invention lies in a direct bond copper (DBC) pate. That is, a first Cu plate on which a semiconductor pellet is formed is fixed on the ceramic plate to continuously extend from the front surface of the ceramic plate to the rear surface thereof via one side surface thereof. Second Cu plates serving as electrodes of the semiconductor pellet are fixed on both sides of the Cu plate on the surface of the ceramic plate on which the semiconductor pellet is disposed. Electrode pads formed on the semiconductor pellet fixed on the first Cu plate are electrically connected to the second Cu plates by means of bonding wires. Since the the first Cu plate is continuously formed on the rear surface of the ceramic plate which is opposite to the surface on which the semiconductor pellet is mounted, the fixation surface of the semiconductor pellet is electrically connected to a heat sink plate.

REFERENCES:
patent: 3994430 (1976-11-01), Cusano et al.
patent: 4518982 (1985-05-01), DuBois et al.
patent: 5012324 (1991-04-01), Martin et al.
patent: 5012387 (1991-04-01), Ohlenburger
patent: 5038198 (1991-08-01), Spatrisano et al.
"A New Hybrid Power Technique Utilizing a Direct Copper to Ceramic Bond", IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976, Y. S. Sun et al, pp. 961-967.

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