Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-23
1993-06-01
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365185, 257408, H01L 2968, H01L 2910, G11C 1134
Patent
active
052162680
ABSTRACT:
Disclosed is a byte-erasable EEPROM memory cell which utilizes a five volt external source and a voltage multiplier circuit to program and erase a floating gate by means of electron tunneling. To prevent collapse of the voltage multiplier circuit a lightly doped drain region is incorporated preventing gate modulated junction breakdown, thereby preventing collapse of the voltage multiplier circuit. In addition, current flow through the channel separating a source region and the lightly doped drain region is controlled by a portion of a control gate and the floating gate, thereby allowing a higher erased cell threshold voltage. Also disclosed is a process for forming the lightly doped drain region by using the control gate as an effective sidewall spacer.
REFERENCES:
patent: 5079603 (1992-01-01), Komori et al.
patent: 5101250 (1992-03-01), Arima et al.
Chen Ling
Lin Tien-Ler
Integrated Silicon Solution Inc.
Prenty Mark V.
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