Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-08-13
1999-09-07
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
148DIG60, 438151, 438471, H01L 21322
Patent
active
059500778
ABSTRACT:
A semiconductor device in accordance with the present invention, for example, is a thin film transistor provided on a transparent substrate. The semiconductor device made of a polysilicon film is provided with (1) a semiconductor layer having a source region and a drain region and (2) a gate electrode provided on a region between the source region and the drain region of the semiconductor layer via a gate insulating film. The semiconductor device is further provided with an organic insulating film made of a condensation polymer having an imide ring such that the organic insulating film covers the gate electrode, the source region, and the drain region. The organic insulating film is formed by applying an organic insulating material such as polyimide, polyamic acid, and other materials, and thereafter by carrying out a calcining process, thereby reducing a trap density of the polysilicon film constituting the semiconductor layer without lowering the productivity due to low throughput, and realizing a semiconductor device which can be suitably adopted as a thin film transistor constituting a matrix circuit section of an active-matrix type liquid crystal display device.
REFERENCES:
patent: 5462886 (1995-10-01), Sakai et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5578697 (1996-11-01), Kawamonzen et al.
Ohue Makoto
Shimada Shinji
Blum David S
Bowers Charles
Sharp Kabushiki Kaisha
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