Semiconductor interconnect structure with air gap for reducing i

Details Semiconductor interconnect structure with air gap for reducing i Semiconductor interconnect structure with air gap for reducing i

1998-01-22

1999-09-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257522, H01L 2348

Patent

active

059491434

ABSTRACT:
An interconnect structure capable of reducing intralevel capacitance in a damascene metalization process employs entrapped air gaps between metal lines. The structure comprises at least first and second metal regions separated by a dielectric region, an air gap formed at least partially within the dielectric region, a diffusion barrier positioned over the two metal regions covering a portion of the upper surface of the air gap, and an insulating layer positioned over the diffusion barrier sealing the upper surface of the air gap.

REFERENCES:
patent: 5310700 (1994-05-01), Lien et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5476817 (1995-12-01), Numata
patent: 5641712 (1997-06-01), Grivna et al.
patent: 5668398 (1997-09-01), Havemann et al.
Fleming et al. "Use of Air Gap Structures to Lower Intralevel Capacitance", DUMIC Conference, Feb. 10-11, 1997, pp. 139-146.

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