Insulated gate semiconductor device typically having subsurface-

Details Insulated gate semiconductor device typically having subsurface- Insulated gate semiconductor device typically having subsurface-

1994-08-03

1997-12-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257142, 257335, 257339, 257342, H01L 2974, H01L 2976

Patent

active

057010234

ABSTRACT:
An insulated gate semiconductor device contains a common drain and a plurality of cells, each having a body region and a source. In each cell, the body region contains a channel region extending between the common drain and the source. The body region further includes a special portion spaced apart from the channel region, more heavily doped than the portion of the body region below the source, extending no more than an electrically insignificant amount below the source, and not extending significantly deeper below the upper semiconductor surface than the portion of the body region underlying the source. The special portion of each body region provides improved ruggedness under drain avalanche conditions. The special portion of each body region normally reaches a peak net dopant concentration below the upper semiconductor surface. Instead of, or in addition to, having the special portion of each body region be subsurface-peaked, the portion of each body region below the source can extend deeper below the upper semiconductor surface than the portion of the body region underlying the special portion.

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