PECVD silicon nitride for etch stop mask and ozone TEOS pattern

Details PECVD silicon nitride for etch stop mask and ozone TEOS pattern PECVD silicon nitride for etch stop mask and ozone TEOS pattern

1996-02-26

1997-12-23

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438724, 438667, H01L 21465

Patent

active

057007373

ABSTRACT:
This invention provides a method for forming dense electrode patterns having a high aspect ratio in a conductor metal layer. The method uses silicon nitride deposited using plasma enhanced chemical vapor deposition, PECVD, as an etch stop mask to protect the conductor metal and anti reflection coating when etching the electrode patterns. The PECVD silicon nitride is also used a mask to eliminate pattern dependence when forming inter-metal dielectric layers. The PECVD silicon nitride is also used as an etch stop mask when forming vias in the inter-metal dielectric for electrical conduction between electrode pattern layers.

REFERENCES:
patent: 5219788 (1993-06-01), Abernathy et al.
patent: 5269879 (1993-12-01), Rhoades et al.
patent: 5451543 (1995-09-01), Woo et al.
S. Wolf, "Silicon Processing for the VLSI Era-vol. 2" Lattice Press, Sunset Beach, CA, 1990, pp. 198-199.
S. Wolf et al. "Silicon Processing for the VLSI Era vol. I" Lattice Press (Calif.) (1986) p. 171.

Affiliated with

Also associated with

Rating

PECVD silicon nitride for etch stop mask and ozone TEOS pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PECVD silicon nitride for etch stop mask and ozone TEOS pattern , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PECVD silicon nitride for etch stop mask and ozone TEOS pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802480