Method for making thin film tantalum oxide layers with enhanced

Details Method for making thin film tantalum oxide layers with enhanced Method for making thin film tantalum oxide layers with enhanced

1996-05-17

1999-09-07

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419221, 438369, 438399, C23C 1434

Patent

active

059482168

ABSTRACT:
The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450.degree. C. and preferably in excess of 550.degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.

REFERENCES:
patent: 3395089 (1968-07-01), Mayer et al.
patent: 4038167 (1977-07-01), Young
patent: 5174926 (1992-12-01), Sahagen
patent: 5367285 (1994-11-01), Swinehart et al.
Schwartz et al., "Impurity Effects in the Nucleation of Alpha (bcc)--Tantalum or Beta-Tantalum Films", Journal of Electrochemistry, vol. 124, No. 1, pp. 123-131, Jan. 1977.
Westwood, "Orientation Effects in the Resistivity of Ta Films Sputtered in Oxygen", Applied Physics Letters, vol. 17, No. 6, pp. 264-265, Sep. 1970.

Affiliated with

Also associated with

Rating

Method for making thin film tantalum oxide layers with enhanced does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making thin film tantalum oxide layers with enhanced , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making thin film tantalum oxide layers with enhanced will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1800985