Controlled in situ etch-back

Details Controlled in situ etch-back Controlled in situ etch-back

1981-11-30

1983-02-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148173, 148175, 156608, 156624, 156654, 156662, H01L 21306

Patent

active

043739890

ABSTRACT:
A controlled in situ etch-back technique is disclosed in which an etch melt 17 and a growth melt 18 are first saturated by a source-seed crystal 15 and thereafter etch-back of a substrate 14 takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

REFERENCES:
patent: 3692593 (1972-09-01), Hawrylo et al.
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3859178 (1975-01-01), Logan et al.
patent: 3891478 (1975-06-01), Ladany et al.
patent: 3960618 (1976-06-01), Kawamura et al.

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