Method for making semiconductor devices utilizing eutectic masks

Details Method for making semiconductor devices utilizing eutectic masks Method for making semiconductor devices utilizing eutectic masks

1984-05-25

1985-05-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 156653, 156657, 156904, 1566591, 156628, 427 85, C23F 102, H01L 744, B44C 122, C03C 1500

Patent

active

045156549

ABSTRACT:
A method is described for making self-aligned doped regions in a body of semiconductor material by means of an in situ eutectic mask formed by the selective removal of one of the phases of a metallic eutectic solidified as a thin film having a lamellar morphology. The elements of the in situ mask may also be utilized as metallic contact lines or interconnecting metallic stripes of a semiconductor device.

REFERENCES:
patent: 3698078 (1972-10-01), Redington
patent: 4108715 (1978-08-01), Ishikawa et al.

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