Increasing the memory performance of flash memory devices by wri

Details Increasing the memory performance of flash memory devices by wri Increasing the memory performance of flash memory devices by wri

1998-02-25

2000-06-27

Chan, Eddie P.

Electrical computers and digital processing systems: memory

Storage accessing and control

Access timing

711150, 711103, 711 5, 711202, G06F 1200

Patent

active

060818786

ABSTRACT:
The present invention includes a digital system having a controller semiconductor device coupled to a host and a nonvolatile memory bank including a plurality of nonvolatile memory devices. The controller transfers information, organized in sectors, with each sector including a user data portion and an overhead portion, between the host and the nonvolatile memory bank and stores and reads two bytes of information relating to the same sector simultaneously within two nonvolatile memory devices. Each nonvolatile memory device is defined by a row of memory locations wherein corresponding rows of at least two semiconductor devices maintain two sectors of information therein with the overhead information relating to the two sectors maintained in one of the memory rows of the nonvolatile memory device. Each 32 sectors of information defines a block identified by a virtual physical block address with a block of information expanding between two memory devices wherein an even and an odd byte of a sector is simultaneously read from or written to two nonvolatile memory devices. In another embodiment, the controller stores an entire sector of information within a single nonvolatile memory device and reads from or writes to, a sector of information by processing corresponding bytes of at least two sectors in two nonvolatile memory devices simultaneously.

REFERENCES:
patent: 4405952 (1983-09-01), Slakmon
patent: 4450559 (1984-05-01), Bond et al.
patent: 4456971 (1984-06-01), Fukuda et al.
patent: 4498146 (1985-02-01), Martinez
patent: 4525839 (1985-07-01), Nozawa et al.
patent: 4616311 (1986-10-01), Sato
patent: 4654847 (1987-03-01), Dutton
patent: 4710871 (1987-12-01), Belknap et al.
patent: 4746998 (1988-05-01), Robinson et al.
patent: 4748320 (1988-05-01), Yorimoto et al.
patent: 4757474 (1988-07-01), Fukushi et al.
patent: 4774700 (1988-09-01), Satoh et al.
patent: 4800520 (1989-01-01), Iijima
patent: 4896262 (1990-01-01), Wayama et al.
patent: 4914529 (1990-04-01), Bonke
patent: 4920518 (1990-04-01), Nakamura et al.
patent: 4924331 (1990-05-01), Robinson et al.
patent: 4953122 (1990-08-01), Williams
patent: 5070474 (1991-12-01), Tuma et al.
patent: 5226168 (1993-07-01), Kobayashi et al.
patent: 5270979 (1993-12-01), Harari et al.
patent: 5297148 (1994-03-01), Harari et al.
patent: 5303198 (1994-04-01), Adachi et al.
patent: 5337275 (1994-08-01), Garner
patent: 5341330 (1994-08-01), Wells et al.
patent: 5341339 (1994-08-01), Wells
patent: 5353256 (1994-10-01), Fandrich et al.
patent: 5357475 (1994-10-01), Hasbun et al.
patent: 5375222 (1994-12-01), Robinson et al.
patent: 5388083 (1995-02-01), Assar et al.
patent: 5430859 (1995-07-01), Norman et al.
patent: 5479638 (1995-12-01), Assar et al.
patent: 5485595 (1996-01-01), Assar et al.
patent: 5524230 (1996-06-01), Sakaue et al.
patent: 5544356 (1996-08-01), Robinson et al.
patent: 5603001 (1997-02-01), Sukegawa et al.
patent: 5732208 (1998-03-01), Tamura et al.
patent: 5740349 (1998-04-01), Hasbun
patent: 5748528 (1998-05-01), Campardo et al.
patent: 5890192 (1999-03-01), Lee et al.
1990 WL 2208325 Magazine--"State of the Art: Magnetic VS. Optical Store Data in a Flash", by Walter Lahti and Dean McCarron, Byte magazine dated Nov. 1, 1990, 311, vol. 15, No. 12.
P4A1 Magazine--Technology Updates, Integrated Circuits, "1-Mbit flash memories seek their role in system design", Ron Wilson, Senior Editor, Computer Design magazine 28 (1989) Mar. 1, No.5, Tulsa OK, US, pp. 30 and 32.
Serial 9Mb F 1992 Symposium of VLSI Circuits Digest of Technical Papers, "EEPPROM for Solid State Disk Applications", S. Mehoura et al., SunDisk Corporation, Santa Clara, CA. R. W. Gregor et al., AT&T Bell Laboratories, Allentown, PA. pp., 24 and 25.

Affiliated with

Also associated with

Rating

Increasing the memory performance of flash memory devices by wri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Increasing the memory performance of flash memory devices by wri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Increasing the memory performance of flash memory devices by wri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1793274