High voltage mosfet structure

Details High voltage mosfet structure High voltage mosfet structure

Filed on

1997-11-10

Date issued

2000-06-27

Examiner

Prenty, Mark V.

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

257495, H01L 2976

Type

Patent

Status

active

Patent number

060810092

Description

ABSTRACT:
A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may include alternating vertical sections of a first and second conductivity type.

REFERENCES:
patent: 4158206 (1979-06-01), Neilson
patent: 5111254 (1992-05-01), Levinson et al.
patent: 5438215 (1995-08-01), Tihanyi

Affiliated with

Also associated with

Rating

High voltage mosfet structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage mosfet structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage mosfet structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1786589