SOI transistor with improved source-high performance

Details SOI transistor with improved source-high performance SOI transistor with improved source-high performance

1993-08-10

1994-11-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257409, H01L 2968, H01L 2978

Patent

active

053629795

ABSTRACT:
The present application is directed to an improved arrangement for a thin silicon SOI transistor having improved source-high performance especially for bridge type circuits. This structure prevents forward current saturation during such source-high operations, and is made by forming the laterally extending silicon layer with a region of thinner thickness over 1/3 to 2/3 of the length of the drift region, or the lateral linear doping region. The field plate is formed with a separation from the gate electrode, and only extends over the thinned portion of the drift region. The gate electrode and field plate are short-circuited by a metal interconnect.

REFERENCES:
patent: 4437225 (1984-03-01), Mizutani
patent: 5124768 (1992-06-01), Mano et al.

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