Semiconductor device using whiskers

Details Semiconductor device using whiskers Semiconductor device using whiskers

1991-04-17

1994-11-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 14, 257 17, 257 20, 257 21, 257 22, 257 24, 257 27, 257 95, H01L 3300

Patent

active

053629728

ABSTRACT:
A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.

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Kasahara, J., Kajiwara, K. and Yamada, T., "GaAs Whiskers Grown By A Thermal Decomposition Method", Journal of Crystal Growth 38 (1977), pp. 23-28.
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E. I. Givargizov, "Oriented Growht of Whiskers of A.sup.III B.sup.V Compounds by VLS-Mechanism", Kristall und Technik, vol. 10, No. 5, 1975, pp. 473-484.
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