Method of detecting a polishing endpoint layer of a semiconducto

Details Method of detecting a polishing endpoint layer of a semiconducto Method of detecting a polishing endpoint layer of a semiconducto

1998-08-10

2000-06-27

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438692, H01L 21302

Patent

active

060806702

ABSTRACT:
A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a sulfur-containing reporting specie includes the step of polishing a first side of the wafer in order to remove material from the wafer. The method also includes the step of detecting presence of the sulfur-containing reporting specie in the material removed from the wafer. The method further includes the step of terminating the polishing step in response to detecting presence of the sulfur-containing reporting specie. A shallow trench isolation process for fabricating a semiconductor wafer is also disclosed.

REFERENCES:
patent: 3734620 (1973-05-01), Cade
patent: 3748014 (1973-07-01), Beiser
patent: 4312732 (1982-01-01), Degenkolb et al.
patent: 4374915 (1983-02-01), Ahlquist et al.
patent: 4632724 (1986-12-01), Chesebro et al.
patent: 4689491 (1987-08-01), Lindow et al.
patent: 4793895 (1988-12-01), Kaanta et al.
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5081421 (1992-01-01), Miller et al.
patent: 5151584 (1992-09-01), Ebbing et al.
patent: 5169491 (1992-12-01), Doan
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5222329 (1993-06-01), Yu
patent: 5240552 (1993-08-01), Yu et al.
patent: 5245790 (1993-09-01), Jerbic
patent: 5245794 (1993-09-01), Salugsugan
patent: 5258093 (1993-11-01), Maniar
patent: 5265378 (1993-11-01), Rostoker
patent: 5272115 (1993-12-01), Sato
patent: 5308438 (1994-05-01), Cote et al.
patent: 5310455 (1994-05-01), Pasch et al.
patent: 5321304 (1994-06-01), Rostoker
patent: 5337015 (1994-08-01), Lustig et al.
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5385866 (1995-01-01), Bartush
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5399234 (1995-03-01), Yu et al.
patent: 5403228 (1995-04-01), Pasch
patent: 5405806 (1995-04-01), Pfiester et al.
patent: 5439551 (1995-08-01), Meikle et al.
patent: 5449314 (1995-09-01), Meikle et al.
patent: 5483568 (1996-01-01), Yano et al.
patent: 5492594 (1996-02-01), Burke et al.
patent: 5516400 (1996-05-01), Pasch et al.
patent: 5531861 (1996-07-01), Yu et al.
patent: 5559428 (1996-09-01), Li et al.
patent: 5561541 (1996-10-01), Sharp et al.
patent: 5595526 (1997-01-01), Yau et al.
patent: 5597442 (1997-01-01), Chen et al.
patent: 5597590 (1997-01-01), Tanimoto et al.
patent: 5607341 (1997-03-01), Leach
patent: 5609511 (1997-03-01), Moriyama et al.
patent: 5614446 (1997-03-01), Ramaswami et al.
patent: 5624304 (1997-04-01), Pasch et al.
patent: 5626715 (1997-05-01), Rostoker
patent: 5627110 (1997-05-01), Lee et al.
patent: 5637185 (1997-06-01), Murarka et al.
patent: 5639388 (1997-06-01), Kimura et al.
patent: 5643046 (1997-07-01), Katakabe et al.
patent: 5643050 (1997-07-01), Chen
patent: 5643061 (1997-07-01), Jackson et al.
patent: 5644221 (1997-07-01), Li et al.
patent: 5645682 (1997-07-01), Skrovan
patent: 5647952 (1997-07-01), Chen
patent: 5656229 (1997-08-01), Tanimoto et al.
patent: 5658183 (1997-08-01), Sandhu et al.
patent: 5660672 (1997-08-01), Li et al.
patent: 5663101 (1997-09-01), Cronin
patent: 5663797 (1997-09-01), Sandhu
patent: 5664987 (1997-09-01), Rentein
patent: 5667424 (1997-09-01), Pan
patent: 5667433 (1997-09-01), Mallon
patent: 5667629 (1997-09-01), Pan et al.
patent: 5668063 (1997-09-01), Fry et al.
patent: 5670410 (1997-09-01), Pan
patent: 5672091 (1997-09-01), Takahashi et al.
patent: 5674784 (1997-10-01), Jang et al.
patent: 5681215 (1997-10-01), Sherwood
patent: 5691253 (1997-11-01), Kobayashi
patent: 5695660 (1997-12-01), Litvak
patent: 5700180 (1997-12-01), Sandhu et al.
patent: 5702292 (1997-12-01), Brunelli et al.
patent: 5704987 (1998-01-01), Huynh etal.
patent: 5705320 (1998-01-01), Hsu et al.
patent: 5705435 (1998-01-01), Chen
patent: 5710076 (1998-01-01), Dai et al.
patent: 5712185 (1998-01-01), Tsai et al.
patent: 5716873 (1998-02-01), Prall et al.
patent: 5720845 (1998-02-01), Liu
patent: 5722875 (1998-03-01), Iwashita et al.
patent: 5722877 (1998-03-01), Meyer et al.
patent: 5725417 (1998-03-01), Robinson
patent: 5736462 (1998-04-01), Takahashi et al.
patent: 5738567 (1998-04-01), Manzonie et al.
patent: 5741171 (1998-04-01), Sarfaty et al.
patent: 5747380 (1998-05-01), Yu et al.
patent: 5755614 (1998-05-01), Adams et al.
patent: 5762536 (1998-06-01), Pant et al.
patent: 5762537 (1998-06-01), Sandhu et al.
patent: 5777739 (1998-07-01), Sandhu et al.
patent: 5795495 (1998-08-01), Meikle
patent: 5861055 (1999-01-01), Allman et al.
patent: 5865666 (1999-02-01), Nagahara
patent: 5868608 (1999-02-01), Allman et al.
patent: 5882244 (1999-03-01), Hiyama et al.
patent: 5882251 (1999-03-01), Berman et al.
patent: 5888120 (1999-03-01), Doran
patent: 5893756 (1999-04-01), Berman et al.
patent: 5931719 (1999-08-01), Nagahara et al.
patent: 5948697 (1999-09-01), Hata
patent: 5957757 (1999-09-01), Berman

Affiliated with

Also associated with

Rating

Method of detecting a polishing endpoint layer of a semiconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of detecting a polishing endpoint layer of a semiconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of detecting a polishing endpoint layer of a semiconducto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1784582