Method of making MOSFET structure

Details Method of making MOSFET structure Method of making MOSFET structure

Filed on

1998-06-19

Date issued

2000-06-27

Examiner

Chaudhari, Chandra

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

On insulating substrate or layer

Other Related Categories

438224, 438300, H01L 21336

Type

Patent

Status

active

Patent number

060806095

Description

ABSTRACT:
An MOSFET includes a substrate, an active region on the substrate, a first insulating element and a second insulating element located a distance apart from each other on the active region, the first and second insulating elements dividing the active region into a source region, a drain region, and a channel region, the channel region being disposed between the source region and the drain region, a third insulating film over the active region between the first and second insulating films, and a gate electrode over the third insulating film.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 5185535 (1993-02-01), Farb et al.
patent: 5518953 (1996-05-01), Takasu
patent: 5627395 (1997-05-01), Witek et al.
"A New CMOS Structure Using a Transisitor on a Lateral Epitaxial Silicon Layer", Terada, K. et al., NEC Res. & Develop., vol. 32, No. 1, pp. 20-28, Jan. 1991.

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