Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-07-28
2000-06-27
Bowers, Charles
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
H01L 2100
Patent
active
060805935
ABSTRACT:
A method of manufacturing a ferroelectric memory of MFS- or MFIS-type includes the steps of forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate, forming a ferroelectric layer on the insulating layer, reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer, and forming an electrode on the ferroelectric layer. Since the insulating layer is formed between a substrate and a ferroelectric material, undesirable reaction between the two substances is prevented. The insulating layer is completely absorbed into the ferroelectric layer due to diffusion during deposition of the ferroelectric layer, to form an MFS-type ferroelectric memory. When some of the insulating layer remains, the ferroelectric memory becomes an MFIS-type. However, since the remaining insulating layer, which corresponds to the insulating layer of the MFIS-type ferroelectric memory, is very thin. Accordingly, characteristics of the MFIS-type ferroelectric memory improve.
REFERENCES:
patent: 5401680 (1995-03-01), Abt et al.
patent: 5760433 (1998-06-01), Ramer et al.
Chung Il-sub
Kim Dae-sig
Bowers Charles
Samsung Electronics Co,. Ltd.
Thompson Craig
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