Static information storage and retrieval – Systems using particular element – Molecular or atomic
Patent
1992-04-23
1994-02-22
Gossage, Glenn
Static information storage and retrieval
Systems using particular element
Molecular or atomic
365174, 365233, 36523003, 365183, 369126, 250306, 250309, 257 30, G11C 1300, G01N 2700
Patent
active
052894088
ABSTRACT:
A scanning tunneling microscope memory apparatus comprises first and second integrated circuit (IC) substrates. First and second cantilevers, which can be moved by piezoelectric elements, are arranged on the first and second IC substrates, respectively. Tunnel current probes are provided on a free end of the first cantilever, and a recording element is provided on a free end of the second cantilever. The first and second cantilevers are spaced from each other and overlap such that the tunnel current probes face the recording element. The first or second substrate includes a charge coupled device (CCD) circuit, a control circuit for controlling the CCD circuit and cantilevers, and a drive circuit having a preamplifier, a write circuit, and a servo circuit.
REFERENCES:
patent: 4343993 (1982-08-01), Binnig et al.
patent: 4831614 (1989-05-01), Duerig et al.
patent: 4916688 (1990-04-01), Foster et al.
patent: 4945515 (1990-07-01), Ooumi
patent: 4956817 (1990-09-01), West et al.
patent: 4962480 (1990-10-01), Ooumi et al.
patent: 5036490 (1991-07-01), Kajimura et al.
Akamine, Albrecht, Zdeblick, and Quate, "Microfabricated Scanning Tunneling Microscope", IEEE Electron Devices Letters, vol. 10, No. 11, Nov. 1989, pp. 490-492.
Isono Yasuo
Kajimura Hiroshi
Kouchi Toshihito
Mimura Yoshiyuki
Ohta Hiroko
Gossage Glenn
Olympus Optical Co,. Ltd.
LandOfFree
Memory apparatus using tunnel current techniques does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory apparatus using tunnel current techniques, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory apparatus using tunnel current techniques will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-177047