Semiconductor integrated circuit for generating an internal powe

Details Semiconductor integrated circuit for generating an internal powe Semiconductor integrated circuit for generating an internal powe

1995-02-23

1997-01-07

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518911, 365226, G11C 1300

Patent

active

055924212

ABSTRACT:
A semiconductor integrated circuit device is provided that can restrict changes in the internal power source potential when an externally applied power source potential changes. The semiconductor integrated circuit device comprises an integrated circuit section, a voltage regulator for limiting an externally applied potential which causes changes in potential levels to a certain potential level to obtain a regulated potential, and a boost circuit driven by the regulated potential as a power source, for boosting the regulated potential to a boosted potential used as a operating power source for the integrated circuit section. The boost circuit is driven by the regulated potential limited to a certain potential level. Even when the level of the potential VCC changes, operation of the boost circuit does not substantially change. Due to the structure in which the boosted potential is generated from the regulated potential, the constant potential range of the boosted potential is enlarged so that operating margins of the device are enlarged.

REFERENCES:
patent: 5329168 (1994-07-01), Sugibayashi et al.
patent: 5363333 (1994-11-01), Tsujimoto
patent: 5426616 (1995-06-01), Kajigaya et al.
M. Horiguchi et al., "Dual-Operating-Voltage Scheme for a Single 5-V 16 Mbit DRAM", IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1128-1132.

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