Semiconductor device

Details Semiconductor device Semiconductor device

1994-11-22

1997-01-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257299, H01L 2976

Patent

active

055920101

ABSTRACT:
A semiconductor device comprising a main circuit having a p-channel MOSFET formed on the surface off the substrate and an n-channel MOSFET formed on the p-type well region which is formed on the n-type Si substrate chip), an input/output (I/O) circuit formed on the substrate, and a substrate bias generating circuit formed on the substrate, characterized by controlling the substrate bias generating circuit via the I/O circuit, and varying a bias supplied to the substrate and the p-type well region, in accordance with the operation mode of the main circuit.

REFERENCES:
patent: T954006 (1977-01-01), Lee et al.
patent: 4937700 (1990-06-01), Iwahashi
patent: 4961007 (1990-10-01), Kumanoya et al.
patent: 5286985 (1994-02-01), Taddiken

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