Tungsten stud process for stacked via applications

Details Tungsten stud process for stacked via applications Tungsten stud process for stacked via applications

1995-07-05

1997-01-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437228, H01L 21283, H01L 21302

Patent

active

055916732

ABSTRACT:
A tungsten stud, stacked via process, has been developed, featuring smooth planar topographies at all metal levels. The desirable topography is obtained by allowing the tungsten stud to reside at the same level, or slightly above the level, of the top surface of the via hole insulator. This is achieved via an insulator etch back procedure, performed after metal stud formation.

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Higelin, G., et al., "A Contact Filling Process With CVD-Tungsten . . . " V-MIC Conf., IEEE, Jun. 9-10, 1986, pp. 443-449.
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Wolf, S., et al., Silicon Processing, vol. 1, 1986, Lattice Press, pp. 168-173, 348-353, 547-551.

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