Method of making a body contacted SOI MOSFET

Details Method of making a body contacted SOI MOSFET Method of making a body contacted SOI MOSFET

1995-06-08

1997-01-07

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 35, 437164, H01L 21265, H01L 21225, H01L 21385

Patent

active

055916503

ABSTRACT:
A new method of forming a silicon-on-insulator device having a body node contact is dscribed. Active areas are isolated from one another within a silicon-on-insulator layer. Adjacent active areas are doped with dopants of opposite polarities to form at least one n-channel active area and at least one p-channel active area. Gate electrodes are formed over each active area. The area directly underlying the gate electrode and extending downward to the insulator layer comprises the body node. Lightly doped areas are formed beneath the spacers on the sidewalls of the gate electrodes. First ions are implanted into the active areas not covered by a mask whereby source and drain regions are formed in the at least one n-channel active area and whereby a p-channel body contact region is formed within the at least one p-channel active area wherein the p-channel body contact region contacts the p-channel body node. Second ions are implanted into the active areas not covered by a mask whereby source and drain regions are formed in the at least one p-channel active area and whereby an n-channel body contact region is formed within the at least one n-channel active area wherein the n-channel body contact region contacts the n-channel body node. The semiconductor substrate is annealed to complete formation of the silicon-on-insulator device having a body node contact in the manufacture of an integrated circuit.

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"An SOI-DRAM With Wide Operating Voltage Range By CMOS/SIMOX Technology" by R. Suma in IEEE 1994 ISSCC Slide Supplement, pp. 104-105.

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