Process for the backside-gettering surface treatment of semicond

Details Process for the backside-gettering surface treatment of semicond Process for the backside-gettering surface treatment of semicond

1982-09-22

1986-05-13

Bernstein, Hiram H.

Abrasive tool making process, material, or composition

Impregnating or coating an abrasive tool

156DIG66, B24B 100

Patent

active

045877718

ABSTRACT:
Point defects or impurities, which are detrimental to the quality of elecnic components, can be eliminated by means of rearsurface damage, which induces dislocations and/or stacking faults, by means of mechanical stress to the semiconductor wafers used in the manufacture of those components. For this purpose, the semiconductor wafers are brought into contact, before polishing, oxidation and thermal treatment, with moving carrier bodies covered with an elastic carrier medium having abrasive grain bonded to it, which creates the desired mechanical stress by forming a large number of very fine scratches and fissures in the surface of the semiconductor wafers.

REFERENCES:
patent: 3905162 (1975-10-01), Lawrence et al.
patent: 4042419 (1977-08-01), Heinke et al.
patent: 4276114 (1981-06-01), Takano et al.
Copy of U.S. patent application Ser. No. 162,236/Lampert et al.

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