Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-08-05
1993-07-20
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, H01L 2910
Patent
active
052296342
ABSTRACT:
vertical power MOSFET which comprises a semiconductive substrate of a first conductivity type serving as drain, an impurity region of a second conductivity type on a part of the surface of the semiconductive substrate, an impurity region of a first conductivity type formed on a part of the surface of the second conductivity type impurity region and serving as source, and a surface portion of a second conductivity type semiconductive substrate between source and drain serving as a channel portion with a gate electrode thereon through an insulating film, so that voltage is applied to the gate electrode to control channel current between source and drain, wherein the first conductivity type semiconductive substrate comprises a low resistivity layer and a high resistivity layer epitaxially formed on the low resistivity layer, and at an interface between the low resistivity layer and the high resistivity layer is provided a convexed portion which projects at least to the high resistivity layer side.
REFERENCES:
patent: 4366495 (1982-12-01), Goodman et al.
patent: 5053838 (1991-10-01), Fujihara
Patent Abstracts of Japan vol. 6, No. 185, Sep. 21, 1982, & JP-A-57100764 (Tokyo Shibaura Denki) Jun. 23, 1982.
Patent Abstracts of Japan vol. 11, No. 171, Jun. 2, 1987; & JP-A-624369 (Toshiba) Jan. 10, 1987.
Patent Abstracts of Japan vol. 12, No. 393, Oct. 19, 1988; & JP-A-63133677 (Matsushita) Jun. 6, 1988.
Matsunami Mitsuo
Miyajima Toshiaki
Tsuji Hideyuki
Yoshioka Minoru
Bowers Courtney A.
James Andrew J.
Sharp Kabushiki Kaishi
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