Semiconductor device in which an increase in threshold voltage,

Details Semiconductor device in which an increase in threshold voltage, Semiconductor device in which an increase in threshold voltage,

1998-08-06

1999-05-18

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257392, H01L29/78

Patent

active

059052929

ABSTRACT:
Disclosed herein is a semiconductor device comprising a semiconductor substrate, a well region provided in the surface of the substrate, a plurality of MOSFETs provided in the well region. The well region has parts having a low surface impurity concentration. Some of the MOSFETs have their channel regions provided in those parts of the well region which have the low surface impurity concentration. The other MOSFETs have their channel regions provided in other parts of the well region.

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