Method for forming metal wirings of semiconductor device

Details Method for forming metal wirings of semiconductor device Method for forming metal wirings of semiconductor device

1991-09-12

1993-07-20

Maples, John S.

Fishing, trapping, and vermin destroying

437190, 437194, 437195, H01L 21441

Patent

active

052293254

ABSTRACT:
A method for forming metal wires of a semiconductor device includes the steps of first forming about half of the total metal wires, the wires being arranged at regular intervals, forming sidewall spacers made of insulating materials on the metal wires using an etchback method, and forming the rest of the total wires at spaces between the wires of the first half, again using an etchback process. This results in a wire structure in which a gap between adjacent metal wires is about 0.1 microns in width.

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patent: 4966867 (1990-10-01), Crotti et al.
patent: 5104826 (1992-04-01), Fujita et al.
A. Rey et al., "A Double Level Aluminum Interconnection Technology With Spin on Glass Based Insulator", Proceed of the Third Int. IEEE VLSI-MIC Conf., Jun. 9-10, 1986, pp. 491-499.

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