Resist pattern forming method and resist material

Details Resist pattern forming method and resist material Resist pattern forming method and resist material

1997-08-26

1999-05-18

McPherson, John A.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430326, 430328, 430330, G03C1/492

Patent

active

059050160

ABSTRACT:
A polymer having a unit expressed as "--CH.sub.2 CHR--" as well as a substituent capable of being decomposed by acid is employed as a base resin for a resist material. The resist material is further mixed with an acid generator. A resist pattern obtained by selectively exposing and developing the resist material is irradiated with light having a wavelength of not more than 300 nm under a nitrogen atmosphere. Active hydrogen at the .alpha.-position of the unit dissociates as a result to form polymer radicals, which are linked with each other in progress of a crosslinking reaction. Namely, a crosslinked structure of the polymer is formed. Consequently, a resist pattern having high dry etching resistance is completed.

REFERENCES:
patent: 5262281 (1993-11-01), Bauer et al.
patent: 5279923 (1994-01-01), Hiro et al.
patent: 5346803 (1994-09-01), Crivello et al.
patent: 5516626 (1996-05-01), Ohmi et al.
patent: 5556734 (1996-09-01), Yamachika et al.

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