Method of manufacturing a thin film transistor using anodic oxid

Details Method of manufacturing a thin film transistor using anodic oxid Method of manufacturing a thin film transistor using anodic oxid

1994-12-30

1999-05-18

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, 438166, 438231, 438305, 438595, H01L21/336;21/84

Patent

active

059045094

ABSTRACT:
In a source/drain doping step in manufacturing a field effect transistor, particularly a thin-film transistor (TFT), high-speed boron ions are implanted in a state that an active layer in which to form the source and drain is covered with an insulating film, whereas phosphorus ions are implanted in a state that the surface of the active layer is exposed.

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